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| Datasheet File OCR Text: |
| PROCESS Small Signal Transistor CP237 Central TM NPN - Saturated Switch Transistor Chip Semiconductor Corp. PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 12,550 PRINCIPAL DEVICE TYPES 2N3725 2N3725A MPQ3725 MPQ3725A EPITAXIAL PLANAR 30 x 30 MILS 9.0 MILS 4.4 x 12.5 MILS 4.4 x 12.5 MILS Al - 30,000A Au - 12,000A BACKSIDE COLLECTOR 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R2 (1-August 2002) Central TM PROCESS CP237 Semiconductor Corp. Typical Electrical Characteristics 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R2 (1-August 2002) |
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